SPICELib.src.BREAKOUT

Name	Description
Ground
Rbreak
Capacitor
Capacitor1
Cbreak
Inductor
Lbreak
DIODE_PSPICE
PSPICE_diode
SPICE2_MOS1
Spice2MOS1
SPICE2_MOS1P
Spice2MOS1P

SPICELib.src.BREAKOUT.Ground

Modelica definition

model Ground 
  extends INTERFACE.OnePin;
equation 
  {p.vDC,p.vTran,p.vAC_Re,p.vAC_Im} = zeros(4);
end Ground;

SPICELib.src.BREAKOUT.Rbreak

Parameters

Name	Default	Description
HIDDEN_COMPONENT	false	Enable or disable log
R	1000	Resistance [Ohm]

Modelica definition

model Rbreak 
  extends INTERFACE.TwoPin;
  extends INIT.Part;
  parameter Boolean HIDDEN_COMPONENT=false "Enable or disable log";
  parameter SI.Resistance R=1000 "Resistance";
  constant SI.Resistance R_EPS=2e-4 "IC resistor";
  SI.Voltage vDC "DC voltage across the component";
  SI.Voltage vTran "Transient voltage across the component";
  SI.Voltage vAC_Re 
    "Real part of AC small-signal voltage across the component";
  SI.Voltage vAC_Im 
    "Imaginary part of AC small-signal voltage across the component";
  
  SI.Current iDC "DC current";
  SI.Current iTran "Transient/Small-signal current";
  SI.Current iAC_Re "Small-signal current. Real part";
  SI.Current iAC_Im "Small-signal current. Imaginary part";
  
  SI.Voltage vAC_mag(start=0) 
    "Magnitude of AC small-signal voltage across the component";
  SI.Voltage vAC_mag_dB(start=0) 
    "Magnitude (dB) of AC small-signal voltage across the component";
  nonSI.Angle_deg vAC_phase(start=0) 
    "Phase (deg) of AC small-signal voltage across the component";
  
  SI.Current iAC_mag(start=0) "Magnitude of AC small-signal current";
  SI.Current iAC_mag_dB(start=0) "Magnitude (dB) of AC small-signal current";
  
  nonSI.Angle_deg iAC_phase(start=0) 
    "Phase (deg) of AC small-signal current";
  SI.Voltage pinP_vAC_mag(start=0);
  SI.Voltage pinP_vAC_phase(start=0);
  SI.Voltage pinP_vAC_mag_dB(start=0);
  
  SI.Voltage pinN_vAC_mag(start=0);
  SI.Voltage pinN_vAC_phase(start=0);
  SI.Voltage pinN_vAC_mag_dB(start=0);
protected 
  SI.Current iDCclampP;
  SI.Current iDCclampN;
  SI.Voltage vDCclampP(start=0);
  SI.Voltage vDCclampN(start=0);
equation 
  // ------------------------------------------------
  // i, v sign criterion: Positive current flows from 
  // the (+) node through the part to the (-) node
  // ------------------------------------------------
  {iDC,iTran,iAC_Re,iAC_Im} = {p.iDC + iDCclampP,p.iTran,p.iAC_Re,p.iAC_Im};
  {iDC,iTran,iAC_Re,iAC_Im} = -{n.iDC + iDCclampN,n.iTran,n.iAC_Re,n.iAC_Im};
  {vDC,vTran,vAC_Re,vAC_Im} = {p.vDC,p.vTran,p.vAC_Re,p.vAC_Im} - {n.vDC,n.
    vTran,n.vAC_Re,n.vAC_Im};
  // ------------
  // Static model
  // ------------
  vDC = R*iDC;
  when ctrl_RBREAK_Tran2DC then
    vDCclampP = p.vTran;
    vDCclampN = n.vTran;
  end when;
  {iDCclampP,iDCclampN} = if ctrl_RBREAK_Tran2DC then {vDCclampP - p.vDC,
    vDCclampN - n.vDC}/R_EPS else zeros(2);
  // ---------------
  // Transient model
  // ---------------
  vTran = R*iTran;
  // ---------------------
  // AC small-signal model
  // ---------------------
  
  {vAC_Re,vAC_Im} = R*{iAC_Re,iAC_Im};
  
  (pinP_vAC_mag,pinP_vAC_phase) = Rect2Polar({p.vAC_Re,p.vAC_Im});
  pinP_vAC_mag_dB = Decibels(pinP_vAC_mag);
  
  (pinN_vAC_mag,pinN_vAC_phase) = Rect2Polar({n.vAC_Re,n.vAC_Im});
  pinN_vAC_mag_dB = Decibels(pinN_vAC_mag);
  
  (vAC_mag,vAC_phase) = Rect2Polar({vAC_Re,vAC_Im});
  vAC_mag_dB = Decibels(vAC_mag);
  
  (iAC_mag,iAC_phase) = Rect2Polar({iAC_Re,iAC_Im});
  iAC_mag_dB = Decibels(iAC_mag);
  // ---------------------------
  // Log static analysis results
  // ---------------------------
  when ctrl_log_DC and ((HIDDEN_COMPONENT == false) or (LOG_RESULTS == 2 and 
      HIDDEN_COMPONENT == true)) then
    LogVariable(p.vDC);
    LogVariable(n.vDC);
  end when;
  when ctrl_log_DC and ((HIDDEN_COMPONENT == false and LOG_RESULTS > 0) or (
      HIDDEN_COMPONENT == true and LOG_RESULTS == 2)) then
    LogVariable(vDC);
    LogVariable(iDC);
  end when;
  // ---------------------------
  // Log AC small-signal results
  // ---------------------------
  when ctrl_log_AC and (HIDDEN_COMPONENT == false or LOG_RESULTS == 2 and 
      HIDDEN_COMPONENT == true) then
    LogVariable(pinP_vAC_mag);
    LogVariable(pinP_vAC_phase);
    LogVariable(pinP_vAC_mag_dB);
    LogVariable(pinN_vAC_mag);
    LogVariable(pinN_vAC_phase);
    LogVariable(pinN_vAC_mag_dB);
  end when;
  when ctrl_log_AC and (HIDDEN_COMPONENT == false and LOG_RESULTS > 0 or 
      HIDDEN_COMPONENT == true and LOG_RESULTS == 2) then
    LogVariable(vAC_mag);
    LogVariable(vAC_mag_dB);
    LogVariable(vAC_phase);
    LogVariable(iAC_mag);
    LogVariable(iAC_mag_dB);
    LogVariable(iAC_phase);
  end when;
end Rbreak;

SPICELib.src.BREAKOUT.Cbreak

Parameters

Name	Default	Description
C	1E-9	Capacitance [F]
IC_ENABLED	false	IC enabled
IC	0	Initial voltage [V]

Modelica definition

model Cbreak 
  
  extends INTERFACE.TwoPin;
  parameter SI.Capacitance C=1E-9 "Capacitance";
  parameter Boolean IC_ENABLED=false "IC enabled";
  parameter SI.Voltage IC=0 "Initial voltage";
  constant SI.Resistance R_eps2=2e-4 "Resistance to avoid high index problems";
  SI.Voltage vDC "DC voltage across the capacitor";
  SI.Voltage vTran "Transient voltage across the capacitor";
  SI.Voltage vAC_Re 
    "Real part of AC small-signal voltage across the capacitor";
  SI.Voltage vAC_Im 
    "Imaginary part of AC small-signal voltage across the capacitor";
  SI.Current iDC "DC current";
  SI.Current iTran "Transient/Small-signal current";
  SI.Current iAC_Re "Small-signal current. Real part";
  SI.Current iAC_Im "Small-signal current. Imaginary part";
  SI.Voltage vAC_mag(start=0) 
    "Magnitude of AC small-signal voltage across the component";
  SI.Voltage vAC_mag_dB(start=0) 
    "Magnitude (dB) of AC small-signal voltage across the component";
  nonSI.Angle_deg vAC_phase(start=0) 
    "Phase (deg) of AC small-signal voltage across the component";
  
  SI.Current iAC_mag(start=0) "Magnitude of AC small-signal current";
  SI.Current iAC_mag_dB(start=0) "Magnitude (dB) of AC small-signal current";
  
  nonSI.Angle_deg iAC_phase(start=0) 
    "Phase (deg) of AC small-signal current";
  SI.Voltage pinP_vAC_mag(start=0);
  SI.Voltage pinP_vAC_phase(start=0);
  SI.Voltage pinP_vAC_mag_dB(start=0);
  
  SI.Voltage pinN_vAC_mag(start=0);
  SI.Voltage pinN_vAC_phase(start=0);
  SI.Voltage pinN_vAC_mag_dB(start=0);
  
  Capacitor1 Capacitor(
    C=C, 
    IC=IC, 
    IC_ENABLED=IC_ENABLED);
  Rbreak R_EPS2(HIDDEN_COMPONENT=true, R=R_eps2) 
    "Resistor to avoid high index problems";
equation 
  {iDC,iTran,iAC_Re,iAC_Im} = {p.iDC,p.iTran,p.iAC_Re,p.iAC_Im};
  {vDC,vTran,vAC_Re,vAC_Im} = {p.vDC,p.vTran,p.vAC_Re,p.vAC_Im} - {n.vDC,n.
    vTran,n.vAC_Re,n.vAC_Im};
  (pinP_vAC_mag,pinP_vAC_phase) = Rect2Polar({p.vAC_Re,p.vAC_Im});
  pinP_vAC_mag_dB = Decibels(pinP_vAC_mag);
  
  (pinN_vAC_mag,pinN_vAC_phase) = Rect2Polar({n.vAC_Re,n.vAC_Im});
  pinN_vAC_mag_dB = Decibels(pinN_vAC_mag);
  
  (vAC_mag,vAC_phase) = Rect2Polar({vAC_Re,vAC_Im});
  vAC_mag_dB = Decibels(vAC_mag);
  
  (iAC_mag,iAC_phase) = Rect2Polar({iAC_Re,iAC_Im});
  iAC_mag_dB = Decibels(iAC_mag);
  connect(R_EPS2.n, n);
  connect(p, Capacitor.p);
  connect(Capacitor.n, R_EPS2.p);
end Cbreak;

SPICELib.src.BREAKOUT.Lbreak

Parameters

Name	Default	Description
IC	0	Initial current [V]
IC_ENABLED	false	IC enabled
L	1E-5	Inductance [H]

Modelica definition

model Lbreak 
  extends Inductor;
  parameter SI.Inductance L=1E-5 "Inductance";
  Real der_iTran "Voltage derivative [V/s]";
equation 
  // ---------------
  // Transient model
  // ---------------
  der_iTran = der(iTran);
  Lvar*der_iTran = vTran;
  Lvar = L;
  LvarAC = L;
end Lbreak;

SPICELib.src.BREAKOUT.PSPICE_diode

Parameters

Name	Default	Description
HIDDEN_COMPONENT	false	Enable or disable log
IS	1e-14	Saturation current [A]
RS	10	Ohmic Resistance [Ohm]
N	1	Emission coefficient
TT	0	Transit time [s]
CJ0	1e-6	zero-bias junction capacitance [F]
VJ	1	Junction potential [V]
M	0.5	grading coefficient
FC	0.5	Coefficient for forward-bias depletion capacitance formula
BV	1e40	reverse breakdown voltage (positive number) [V]
IKF	-1	High injection knee current [A]
ISR	1e-14	Recombination current [A]
NR	1	Emission coefficient for ISR
IBV	1e-3	Reverse breakdown current (positive number) [A]

Modelica definition

model PSPICE_diode 
  extends INTERFACE.TwoPin;
  extends INIT.Part;
  parameter Boolean HIDDEN_COMPONENT=false "Enable or disable log";
  parameter SI.Current IS=1e-14 "Saturation current";
  parameter SI.Resistance RS=10 "Ohmic Resistance";
  parameter Real N=1 "Emission coefficient";
  parameter SI.Time TT=0 "Transit time";
  parameter SI.Capacitance CJ0=1e-6 "zero-bias junction capacitance";
  parameter SI.Voltage VJ=1 "Junction potential";
  parameter Real M=0.5 "grading coefficient";
  parameter Real FC=0.5 
    "Coefficient for forward-bias depletion capacitance formula";
  parameter SI.Voltage BV=1e40 "reverse breakdown voltage (positive number)";
  parameter SI.Current IKF=-1 "High injection knee current";
  parameter SI.Current ISR=1e-14 "Recombination current";
  parameter Real NR=1 "Emission coefficient for ISR";
  parameter SI.Current IBV=1e-3 "Reverse breakdown current (positive number)";
  
  SI.Voltage vDC "DC voltage between pines";
  SI.Voltage vTran "Transient voltage between pines";
  SI.Voltage vAC_Re "Real part of AC small-signal voltage between pines";
  SI.Voltage vAC_Im 
    "Imaginary part of AC small-signal voltage between pines";
  SI.Current iDC "DC current";
  SI.Current iTran "Transient/Small-signal current";
  SI.Current iAC_Re "Small-signal current. Real part";
  SI.Current iAC_Im "Small-signal current. Imaginary part";
  SI.Voltage vAC_mag(start=0) 
    "Magnitude of AC small-signal voltage across the component";
  SI.Voltage vAC_mag_dB(start=0) 
    "Magnitude (dB) of AC small-signal voltage across the component";
  nonSI.Angle_deg vAC_phase(start=0) 
    "Phase (deg) of AC small-signal voltage across the component";
  
  SI.Current iAC_mag(start=0) "Magnitude of AC small-signal current";
  SI.Current iAC_mag_dB(start=0) "Magnitude (dB) of AC small-signal current";
  
  nonSI.Angle_deg iAC_phase(start=0) 
    "Phase (deg) of AC small-signal current";
  SI.Voltage pinP_vAC_mag(start=0);
  SI.Voltage pinP_vAC_phase(start=0);
  SI.Voltage pinP_vAC_mag_dB(start=0);
  
  SI.Voltage pinN_vAC_mag(start=0);
  SI.Voltage pinN_vAC_phase(start=0);
  SI.Voltage pinN_vAC_mag_dB(start=0);
  DIODE_PSPICE.I_DIODE I_diode(
    IS=IS, 
    BV=BV, 
    N=N, 
    IKF=IKF, 
    ISR=ISR, 
    NR=NR, 
    IBV=IBV, 
    M=M, 
    VJ=VJ);
  DIODE_PSPICE.C_DIODE Cdiode(
    IS=IS, 
    BV=BV, 
    N=N, 
    TT=TT, 
    CJ0=CJ0, 
    M=M, 
    VJ=VJ, 
    FC=FC, 
    IKF=IKF, 
    ISR=ISR, 
    NR=NR, 
    IBV=IBV);
  Rbreak Rs(R=RS, HIDDEN_COMPONENT=true);
equation 
  
  // For numerical efficiency
  Cdiode.vTran = I_diode.vDiodeTran;
  
  {iDC,iTran,iAC_Re,iAC_Im} = {p.iDC,p.iTran,p.iAC_Re,p.iAC_Im};
  {vDC,vTran,vAC_Re,vAC_Im} = {p.vDC,p.vTran,p.vAC_Re,p.vAC_Im} - {n.vDC,n.
    vTran,n.vAC_Re,n.vAC_Im};
  (pinP_vAC_mag,pinP_vAC_phase) = Rect2Polar({p.vAC_Re,p.vAC_Im});
  pinP_vAC_mag_dB = Decibels(pinP_vAC_mag);
  
  (pinN_vAC_mag,pinN_vAC_phase) = Rect2Polar({n.vAC_Re,n.vAC_Im});
  pinN_vAC_mag_dB = Decibels(pinN_vAC_mag);
  
  (vAC_mag,vAC_phase) = Rect2Polar({vAC_Re,vAC_Im});
  vAC_mag_dB = Decibels(vAC_mag);
  
  (iAC_mag,iAC_phase) = Rect2Polar({iAC_Re,iAC_Im});
  iAC_mag_dB = Decibels(iAC_mag);
  // ---------------------------
  // Log static analysis results
  // ---------------------------
  when ctrl_log_DC and ((HIDDEN_COMPONENT == false) or (LOG_RESULTS == 2 and 
      HIDDEN_COMPONENT == true)) then
    LogVariable(p.vDC);
    LogVariable(n.vDC);
  end when;
  when ctrl_log_DC and ((HIDDEN_COMPONENT == false and LOG_RESULTS > 0) or (
      HIDDEN_COMPONENT == true and LOG_RESULTS == 2)) then
    LogVariable(vDC);
    LogVariable(iDC);
  end when;
  // ---------------------------
  // Log AC small-signal results
  // ---------------------------
  when ctrl_log_AC and (HIDDEN_COMPONENT == false or LOG_RESULTS == 2 and 
      HIDDEN_COMPONENT == true) then
    LogVariable(pinP_vAC_mag);
    LogVariable(pinP_vAC_phase);
    LogVariable(pinP_vAC_mag_dB);
    LogVariable(pinN_vAC_mag);
    LogVariable(pinN_vAC_phase);
    LogVariable(pinN_vAC_mag_dB);
  end when;
  when ctrl_log_AC and (HIDDEN_COMPONENT == false and LOG_RESULTS > 0 or 
      HIDDEN_COMPONENT == true and LOG_RESULTS == 2) then
    LogVariable(vAC_mag);
    LogVariable(vAC_mag_dB);
    LogVariable(vAC_phase);
    LogVariable(iAC_mag);
    LogVariable(iAC_mag_dB);
    LogVariable(iAC_phase);
  end when;
  connect(Cdiode.n, I_diode.n);
  connect(Rs.n, I_diode.p);
  connect(Rs.p, p);
  connect(I_diode.n, n);
  connect(Rs.n, Cdiode.p);
end PSPICE_diode;

SPICELib.src.BREAKOUT.Spice2MOS1

Parameters

Name	Default	Description
HIDDEN_COMPONENT	false	Enable or disable log
AD	1e-8	drain difussion area [m2]
AS	1e-8	Source difussion area [m2]
CGBO	2e-10	Gate-bulk overlap capacitance per meter [F/m]
CGDO	4e-11	Gate-drain overlap capacitance per meter [F/m]
CGSO	4e-11	Gate-source overlap capacitance per meter [F/m]
CJ	2e-4	Capacitance at zero-bias voltage per square meter of area [F/m2]
CJSW	1e-9	Capacitance at zero-bias voltage per meter of perimeter [F/m]
FC	0.5	Substrate-junction forward-bias coefficient
GAMMA	0.526	Body-effect parameter [V0.5]
IS	1e-14	Reverse saturation current at 300K [A]
KP	27.6e-6	Transconductance parameter [A/V2]
L	100e-6	Gate length [m]
LAMBDA	0.00	Channel-length modulation [V-1]
LD	0.8e-6	Lateral diffusion [m]
MJ	0.5	Bulk junction capacitnce grading coefficient
MJSW	0.33	Perimeter capacitance grading coefficient
PD	4e-4	drain difussion perimeter [m]
PS	4e-4	source difussion perimeter [m]
PB	0.75	Junction potencial [V]
PHI	0.65	Surface inversion potencial [V]
RD	10	Drain ohmic resistance [Ohm]
RS	10	Source ohmic resistance [Ohm]
RB	10	Bulk ohmic resistance [Ohm]
RG	10	Gate ohmic resistance [Ohm]
TOX	1e-7	Gate oxide thickness [m]
VTO	1	Zero-bias threshold voltage [V]
W	100e-6	Gate width [m]
RSB	1e-4	Source-Bulk junction resistance [Ohm]
RDB	1e-4	Drain-Bulk junction resistance [Ohm]

Modelica definition

model Spice2MOS1 
  extends INTERFACE.MOSFET;
  extends INIT.Part;
  inner SI.Voltage vdsDC "Drain to source voltage";
  inner SI.Voltage vgsDC "Gate to source voltage";
  inner SI.Voltage vbsDC "Bulk to source voltage";
  
  inner SI.Voltage vdsTran "Drain to source voltage";
  inner SI.Voltage vgsTran "Gate to source voltage";
  inner SI.Voltage vbsTran "Bulk to source voltage";
  
  SI.Voltage drain_vAC_mag "Magnitude of AC small-signal drain voltage";
  SI.Voltage drain_vAC_mag_dB 
    "Magnitude (dB) of AC small-signal drain voltage";
  nonSI.Angle_deg drain_vAC_phase(start=0) 
    "Phase (deg) of AC small-signal drain voltage";
  
  SI.Voltage source_vAC_mag "Magnitude of AC small-signal source voltage";
  SI.Voltage source_vAC_mag_dB 
    "Magnitude (dB) of AC small-signal source voltage";
  nonSI.Angle_deg source_vAC_phase(start=0) 
    "Phase (deg) of drain AC small-signal source voltage";
  
  SI.Voltage bulk_vAC_mag "Magnitude of AC small-signal bulk voltage";
  SI.Voltage bulk_vAC_mag_dB 
    "Magnitude (dB) of AC small-signal bulk voltage";
  nonSI.Angle_deg bulk_vAC_phase(start=0) 
    "Phase (deg) of AC small-signal bulk voltage";
  
  SI.Voltage gate_vAC_mag "Magnitude of AC small-signal gate voltage";
  SI.Voltage gate_vAC_mag_dB 
    "Magnitude (dB) of AC small-signal gate voltage";
  nonSI.Angle_deg gate_vAC_phase(start=0) 
    "Phase (deg) of AC small-signal gate voltage";
  
  SI.Current drain_iAC_mag "Magnitude of AC small-signal drain current";
  SI.Current drain_iAC_mag_dB 
    "Magnitude (dB) of AC small-signal drain current";
  nonSI.Angle_deg drain_iAC_phase(start=0) 
    "Phase (deg) of AC small-signal drain current";
  
  SI.Current source_iAC_mag "Magnitude of AC small-signal source current";
  SI.Current source_iAC_mag_dB 
    "Magnitude (dB) of AC small-signal source current";
  nonSI.Angle_deg source_iAC_phase(start=0) 
    "Phase (deg) of drain AC small-signal source current";
  
  SI.Current bulk_iAC_mag "Magnitude of AC small-signal bulk current";
  SI.Current bulk_iAC_mag_dB 
    "Magnitude (dB) of AC small-signal bulk current";
  nonSI.Angle_deg bulk_iAC_phase(start=0) 
    "Phase (deg) of AC small-signal bulk current";
  
  SI.Current gate_iAC_mag "Magnitude of AC small-signal gate current";
  SI.Current gate_iAC_mag_dB 
    "Magnitude (dB) of AC small-signal gate current";
  nonSI.Angle_deg gate_iAC_phase(start=0) 
    "Phase (deg) of AC small-signal gate current";
  
  parameter Boolean HIDDEN_COMPONENT=false "Enable or disable log";
  
  parameter SI.Area AD=1e-8 "drain difussion area";
  parameter SI.Area AS=1e-8 "Source difussion area";
  parameter Real CGBO=2e-10 "Gate-bulk overlap capacitance per meter [F/m]";
  parameter Real CGDO=4e-11 "Gate-drain overlap capacitance per meter [F/m]";
  parameter Real CGSO=4e-11 "Gate-source overlap capacitance per meter [F/m]";
  parameter Real CJ=2e-4 
    "Capacitance at zero-bias voltage per square meter of area [F/m2]";
  parameter Real CJSW=1e-9 
    "Capacitance at zero-bias voltage per meter of perimeter [F/m]";
  parameter Real FC=0.5 "Substrate-junction forward-bias coefficient";
  parameter Real GAMMA=0.526 "Body-effect parameter [V0.5]";
  parameter SI.Current IS=1e-14 "Reverse saturation current at 300K";
  parameter Real KP=27.6e-6 "Transconductance parameter [A/V2]";
  parameter SI.Length L=100e-6 "Gate length";
  parameter Real LAMBDA=0.00 "Channel-length modulation [V-1]";
  parameter SI.Length LD=0.8e-6 "Lateral diffusion";
  parameter Real MJ=0.5 "Bulk junction capacitnce grading coefficient";
  parameter Real MJSW=0.33 "Perimeter capacitance grading coefficient";
  parameter SI.Length PD=4e-4 "drain difussion perimeter";
  parameter SI.Length PS=4e-4 "source difussion perimeter";
  parameter SI.Voltage PB=0.75 "Junction potencial";
  parameter SI.Voltage PHI=0.65 "Surface inversion potencial";
  parameter SI.Resistance RD=10 "Drain ohmic resistance";
  parameter SI.Resistance RS=10 "Source ohmic resistance";
  parameter SI.Resistance RB=10 "Bulk ohmic resistance";
  parameter SI.Resistance RG=10 "Gate ohmic resistance";
  parameter SI.Length TOX=1e-7 "Gate oxide thickness";
  parameter SI.Voltage VTO=1 "Zero-bias threshold voltage";
  parameter SI.Length W=100e-6 "Gate width";
  
  constant Real EPSR=3.9 "Dielectric constant of the oxide";
  
  parameter SI.Resistance RSB=1e-4 "Source-Bulk junction resistance";
  parameter SI.Resistance RDB=1e-4 "Drain-Bulk junction resistance";
  
protected 
  inner SI.Voltage vdsDCSgn "Drain-pin to source-pin voltage";
  inner SI.Voltage vthDC "Threshold voltage";
  
  inner SI.Voltage vdsTranSgn "Drain-pin to source-pin voltage";
  inner SI.Voltage vthTran "Threshold voltage";
  
  inner SI.Voltage gate_vAC_Re;
  inner SI.Voltage gate_vAC_Im;
  inner SI.Voltage bulk_vAC_Re;
  inner SI.Voltage bulk_vAC_Im;
  
  // --------------------
  // Drain-Source current
  // --------------------
  SPICE2_MOS1.Ids Ids(
    VTO=VTO, 
    GAMMA=GAMMA, 
    PHI=PHI, 
    KP=KP, 
    W=W, 
    L=L, 
    LD=LD, 
    LAMBDA=LAMBDA);
  // --------------------
  // Source-Bulk junction
  // --------------------
  
  SPICE2_MOS1.Idiode Dbs(IS=IS);
  
  SPICE2_MOS1.Cdiode Cbs(
    CJ=CJ, 
    CJSW=CJSW, 
    MJ=MJ, 
    MJSW=MJSW, 
    FC=FC, 
    PB=PB, 
    P=PS, 
    A=AS);
  
  // -------------------
  // Drain-Bulk junction
  // -------------------
  
  SPICE2_MOS1.Idiode Dbd(IS=IS);
  
  SPICE2_MOS1.Cdiode Cbd(
    CJ=CJ, 
    CJSW=CJSW, 
    MJ=MJ, 
    MJSW=MJSW, 
    FC=FC, 
    PB=PB, 
    P=PD, 
    A=AD);
  
  // ----------------
  // Gate capacitance
  // ----------------
  SPICE2_MOS1.Cgd Cgd(
    PHI=PHI, 
    LD=LD, 
    W=W, 
    L=L, 
    TOX=TOX, 
    EPSR=EPSR, 
    CGDO=CGDO, 
    CGSO=CGSO, 
    gateSourcePinsC=false);
  
  SPICE2_MOS1.Cgd Cgs(
    PHI=PHI, 
    LD=LD, 
    W=W, 
    L=L, 
    TOX=TOX, 
    EPSR=EPSR, 
    CGDO=CGDO, 
    CGSO=CGSO, 
    gateSourcePinsC=true);
  
  SPICE2_MOS1.Cgb Cgb(
    PHI=PHI, 
    LD=LD, 
    W=W, 
    L=L, 
    TOX=TOX, 
    EPSR=EPSR, 
    CGBO=CGBO);
  // ---------------
  // Drain resistors
  // ---------------
  Rbreak Rs(R=RS, HIDDEN_COMPONENT=true);
  Rbreak Rd(R=RD, HIDDEN_COMPONENT=true);
  
  // -------------
  // Gate resistor
  // -------------
  Rbreak Rg(R=RG, HIDDEN_COMPONENT=true);
  
  // -------------
  // Bulk resistor
  // -------------
  Rbreak Rb(R=RB, HIDDEN_COMPONENT=true);
  Rbreak Rsb(HIDDEN_COMPONENT=true, R=RSB);
  Rbreak Rdb(HIDDEN_COMPONENT=true, R=RDB);
equation 
  
  // ----------------------------------
  // Source-bulk junction: to avoid SSE
  // ----------------------------------
  
  Dbs.vDiodeTran = Cbs.vTran;
  
  // ---------------------------------
  // Drain-bulk junction: to avoid SSE
  // ---------------------------------
  
  Dbd.vDiodeTran = Cbd.vTran;
  
  // -----------------
  // Threshold voltage
  // -----------------
  vthDC = VTO + GAMMA*(sqrt(abs(PHI - vbsDC)) - sqrt(PHI));
  vthTran = VTO + GAMMA*(sqrt(abs(PHI - vbsTran)) - sqrt(PHI));
  
  // ---
  // Vds
  // ---
  
  vdsDC = noEvent(abs(Ids.vDC));
  vdsDCSgn = Ids.vDC;
  
  vdsTran = noEvent(abs(Cgs.vTran - Cgd.vTran));
  vdsTranSgn = Cgs.vTran - Cgd.vTran;
  
  // ---
  // Vgs
  // ---
  
  vgsDC = max({Cgs.vDC,Cgd.vDC});
  vgsTran = max({Cgs.vTran,Cgd.vTran});
  
  // ---
  // Vbs
  // ---
  
  vbsDC = max({Cbs.vDC,Cbd.vDC});
  vbsTran = max({Cbs.vTran,Cbd.vTran});
  
  // ------------------------------------
  // Gate & bulk AC small-signal voltages
  // ------------------------------------
  gate_vAC_Re = g.vAC_Re;
  gate_vAC_Im = g.vAC_Im;
  bulk_vAC_Re = b.vAC_Re;
  bulk_vAC_Im = b.vAC_Im;
  
  (drain_vAC_mag,drain_vAC_phase) = Rect2Polar({d.vAC_Re,d.vAC_Im});
  drain_vAC_mag_dB = Decibels(drain_vAC_mag);
  
  (drain_iAC_mag,drain_iAC_phase) = Rect2Polar({d.iAC_Re,d.iAC_Im});
  drain_iAC_mag_dB = Decibels(drain_iAC_mag);
  
  (source_vAC_mag,source_vAC_phase) = Rect2Polar({s.vAC_Re,s.vAC_Im});
  source_vAC_mag_dB = Decibels(source_vAC_mag);
  
  (source_iAC_mag,source_iAC_phase) = Rect2Polar({s.iAC_Re,s.iAC_Im});
  source_iAC_mag_dB = Decibels(source_iAC_mag);
  
  (bulk_vAC_mag,bulk_vAC_phase) = Rect2Polar({b.vAC_Re,b.vAC_Im});
  bulk_vAC_mag_dB = Decibels(bulk_vAC_mag);
  
  (bulk_iAC_mag,bulk_iAC_phase) = Rect2Polar({b.iAC_Re,b.iAC_Im});
  bulk_iAC_mag_dB = Decibels(bulk_iAC_mag);
  
  (gate_vAC_mag,gate_vAC_phase) = Rect2Polar({g.vAC_Re,g.vAC_Im});
  gate_vAC_mag_dB = Decibels(gate_vAC_mag);
  
  (gate_iAC_mag,gate_iAC_phase) = Rect2Polar({g.iAC_Re,g.iAC_Im});
  gate_iAC_mag_dB = Decibels(gate_iAC_mag);
  
  when ctrl_log_DC and ((HIDDEN_COMPONENT == false) or (LOG_RESULTS == 2 and 
      HIDDEN_COMPONENT == true)) then
    LogVariable(g.vDC);
    LogVariable(d.vDC);
    LogVariable(s.vDC);
    LogVariable(b.vDC);
  end when;
  when ctrl_log_DC and ((HIDDEN_COMPONENT == false and LOG_RESULTS > 0) or (
      HIDDEN_COMPONENT == true and LOG_RESULTS == 2)) then
    LogVariable(vdsDC);
    LogVariable(vbsDC);
    LogVariable(vgsDC);
  end when;
  
  // ---------------------
  // Component connections
  // ---------------------
  connect(d, Rd.p);
  connect(Rd.n, Ids.p);
  connect(Ids.n, Rs.p);
  connect(Rs.n, s);
  
  connect(Rg.n, Cgd.p);
  connect(Rg.n, Cgs.p);
  connect(Rg.n, Cgb.p);
  
  connect(Rg.p, g);
  
  connect(Rb.n, Dbs.p);
  connect(Rb.n, Cbs.p);
  connect(Rb.n, Dbd.p);
  connect(Rb.n, Cbd.p);
  connect(Rb.n, Cgb.n);
  
  connect(b, Rb.p);
  
  connect(Ids.n, Cgs.n);
  
  // connect(Ids.n, Rbs.n);
  
  connect(Ids.p, Cgd.n);
  
  // connect(Ids.p, Rbd.n);
  connect(Rsb.p, Cbs.n);
  connect(Rsb.n, Ids.n);
  
  connect(Rdb.p, Cbd.n);
  connect(Rdb.n, Rd.n);
  
  connect(Cbd.n, Dbd.n);
  
  connect(Dbs.n, Cbs.n);
  
  
end Spice2MOS1;

SPICELib.src.BREAKOUT.Spice2MOS1P

Parameters

Name	Default	Description
HIDDEN_COMPONENT	false	Enable or disable log
AD	1e-8	drain difussion area [m2]
AS	1e-8	Source difussion area [m2]
CGBO	2e-10	Gate-bulk overlap capacitance per meter [F/m]
CGDO	4e-11	Gate-drain overlap capacitance per meter [F/m]
CGSO	4e-11	Gate-source overlap capacitance per meter [F/m]
CJ	2e-4	Capacitance at zero-bias voltage per squere meter of area [F/m2]
CJSW	1e-9	Capacitance at zero-bias voltage per meter of perimeter [F/m]
FC	0.5	Substrate-junction forward-bias coefficient
GAMMA	0.526	Body-effect parameter [V0.5]
IS	1e-14	Reverse saturation current at 300K [A]
KP	27.6e-6	Transconductance parameter [A/V2]
L	100e-6	Gate length [m]
LAMBDA	0.00	Channel-length modulation [V-1]
LD	0.8e-6	Lateral diffusion [m]
MJ	0.5	Bulk junction capacitnce grading coefficient
MJSW	0.33	Perimeter capacitance grading coefficient
PD	4e-4	drain difussion perimeter [m]
PS	4e-4	source difussion perimeter [m]
PB	0.75	Junction potencial [V]
PHI	0.65	Surface inversion potencial [V]
RD	10	Drain ohmic resistance [Ohm]
RS	10	Source ohmic resistance [Ohm]
RB	10	Bulk ohmic resistance [Ohm]
RG	10	Gate ohmic resistance [Ohm]
TOX	1e-7	Gate oxide thickness [m]
VTO	-1	Zero-bias threshold voltage [V]
W	100e-6	Gate width [m]
RSB	1e-4	Source-Bulk junction resistance [Ohm]
RDB	1e-4	Drain-Bulk junction resistance [Ohm]

Modelica definition

model Spice2MOS1P 
  extends INTERFACE.MOSFET;
  extends INIT.Part;
  inner SI.Voltage vsdDC "Source to drain voltage";
  inner SI.Voltage vsgDC "Source to gate voltage";
  inner SI.Voltage vsbDC "Source to bulk voltage";
  
  inner SI.Voltage vsdTran "Source to drain voltage";
  inner SI.Voltage vsgTran "Source to gate voltage";
  inner SI.Voltage vsbTran "Source to bulk voltage";
  
  SI.Voltage drain_vAC_mag "Magnitude of AC small-signal drain voltage";
  SI.Voltage drain_vAC_mag_dB 
    "Magnitude (dB) of AC small-signal drain voltage";
  nonSI.Angle_deg drain_vAC_phase(start=0) 
    "Phase (deg) of AC small-signal drain voltage";
  
  SI.Voltage source_vAC_mag "Magnitude of AC small-signal source voltage";
  SI.Voltage source_vAC_mag_dB 
    "Magnitude (dB) of AC small-signal source voltage";
  nonSI.Angle_deg source_vAC_phase(start=0) 
    "Phase (deg) of drain AC small-signal source voltage";
  
  SI.Voltage bulk_vAC_mag "Magnitude of AC small-signal bulk voltage";
  SI.Voltage bulk_vAC_mag_dB 
    "Magnitude (dB) of AC small-signal bulk voltage";
  nonSI.Angle_deg bulk_vAC_phase(start=0) 
    "Phase (deg) of AC small-signal bulk voltage";
  
  SI.Voltage gate_vAC_mag "Magnitude of AC small-signal gate voltage";
  SI.Voltage gate_vAC_mag_dB 
    "Magnitude (dB) of AC small-signal gate voltage";
  nonSI.Angle_deg gate_vAC_phase(start=0) 
    "Phase (deg) of AC small-signal gate voltage";
  
  SI.Current drain_iAC_mag "Magnitude of AC small-signal drain current";
  SI.Current drain_iAC_mag_dB 
    "Magnitude (dB) of AC small-signal drain current";
  nonSI.Angle_deg drain_iAC_phase(start=0) 
    "Phase (deg) of AC small-signal drain current";
  
  SI.Current source_iAC_mag "Magnitude of AC small-signal source current";
  SI.Current source_iAC_mag_dB 
    "Magnitude (dB) of AC small-signal source current";
  nonSI.Angle_deg source_iAC_phase(start=0) 
    "Phase (deg) of drain AC small-signal source current";
  
  SI.Current bulk_iAC_mag "Magnitude of AC small-signal bulk current";
  SI.Current bulk_iAC_mag_dB 
    "Magnitude (dB) of AC small-signal bulk current";
  nonSI.Angle_deg bulk_iAC_phase(start=0) 
    "Phase (deg) of AC small-signal bulk current";
  
  SI.Current gate_iAC_mag "Magnitude of AC small-signal gate current";
  SI.Current gate_iAC_mag_dB 
    "Magnitude (dB) of AC small-signal gate current";
  nonSI.Angle_deg gate_iAC_phase(start=0) 
    "Phase (deg) of AC small-signal gate current";
  
  parameter Boolean HIDDEN_COMPONENT=false "Enable or disable log";
  
  parameter SI.Area AD=1e-8 "drain difussion area";
  parameter SI.Area AS=1e-8 "Source difussion area";
  parameter Real CGBO=2e-10 "Gate-bulk overlap capacitance per meter [F/m]";
  parameter Real CGDO=4e-11 "Gate-drain overlap capacitance per meter [F/m]";
  parameter Real CGSO=4e-11 "Gate-source overlap capacitance per meter [F/m]";
  parameter Real CJ=2e-4 
    "Capacitance at zero-bias voltage per squere meter of area [F/m2]";
  parameter Real CJSW=1e-9 
    "Capacitance at zero-bias voltage per meter of perimeter [F/m]";
  parameter Real FC=0.5 "Substrate-junction forward-bias coefficient";
  parameter Real GAMMA=0.526 "Body-effect parameter [V0.5]";
  parameter SI.Current IS=1e-14 "Reverse saturation current at 300K";
  parameter Real KP=27.6e-6 "Transconductance parameter [A/V2]";
  parameter SI.Length L=100e-6 "Gate length";
  parameter Real LAMBDA=0.00 "Channel-length modulation [V-1]";
  parameter SI.Length LD=0.8e-6 "Lateral diffusion";
  parameter Real MJ=0.5 "Bulk junction capacitnce grading coefficient";
  parameter Real MJSW=0.33 "Perimeter capacitance grading coefficient";
  parameter SI.Length PD=4e-4 "drain difussion perimeter";
  parameter SI.Length PS=4e-4 "source difussion perimeter";
  parameter SI.Voltage PB=0.75 "Junction potencial";
  parameter SI.Voltage PHI=0.65 "Surface inversion potencial";
  parameter SI.Resistance RD=10 "Drain ohmic resistance";
  parameter SI.Resistance RS=10 "Source ohmic resistance";
  parameter SI.Resistance RB=10 "Bulk ohmic resistance";
  parameter SI.Resistance RG=10 "Gate ohmic resistance";
  parameter SI.Length TOX=1e-7 "Gate oxide thickness";
  parameter SI.Voltage VTO=-1 "Zero-bias threshold voltage";
  parameter SI.Length W=100e-6 "Gate width";
  
  constant Real EPSR=3.9 "Dielectric constant of the oxide";
  
  parameter SI.Resistance RSB=1e-4 "Source-Bulk junction resistance";
  parameter SI.Resistance RDB=1e-4 "Drain-Bulk junction resistance";
  
protected 
  inner SI.Voltage vthDC "Threshold voltage";
  inner SI.Voltage vsdDCSgn "Source-pin to drain-pin voltage";
  
  inner SI.Voltage vsdTranSgn "Source-pin to drain-pin voltage";
  inner SI.Voltage vthTran "Threshold voltage";
  
  inner SI.Voltage gate_vAC_Re;
  inner SI.Voltage gate_vAC_Im;
  inner SI.Voltage bulk_vAC_Re;
  inner SI.Voltage bulk_vAC_Im;
  
  // --------------------
  // Drain-Source current
  // --------------------
  SPICE2_MOS1P.Isd Isd(
    VTO=VTO, 
    GAMMA=GAMMA, 
    PHI=PHI, 
    KP=KP, 
    W=W, 
    L=L, 
    LD=LD, 
    LAMBDA=LAMBDA);
  // --------------------
  // Source-Bulk junction
  // --------------------
  SPICE2_MOS1P.Idiode Dsb(IS=IS);
  SPICE2_MOS1P.Cdiode Csb(
    CJ=CJ, 
    CJSW=CJSW, 
    MJ=MJ, 
    MJSW=MJSW, 
    FC=FC, 
    PB=PB, 
    P=PS, 
    A=AS);
  // -------------------
  // Drain-Bulk junction
  // -------------------
  SPICE2_MOS1P.Idiode Ddb(IS=IS);
  SPICE2_MOS1P.Cdiode Cdb(
    CJ=CJ, 
    CJSW=CJSW, 
    MJ=MJ, 
    MJSW=MJSW, 
    FC=FC, 
    PB=PB, 
    P=PD, 
    A=AD);
  // ----------------
  // Gate capacitance
  // ----------------
  SPICE2_MOS1P.Cdg Cdg(
    PHI=PHI, 
    LD=LD, 
    W=W, 
    L=L, 
    TOX=TOX, 
    EPSR=EPSR, 
    CGDO=CGDO, 
    CGSO=CGSO, 
    sourceGatePinsC=false);
  SPICE2_MOS1P.Cdg Csg(
    PHI=PHI, 
    LD=LD, 
    W=W, 
    L=L, 
    TOX=TOX, 
    EPSR=EPSR, 
    CGDO=CGDO, 
    CGSO=CGSO, 
    sourceGatePinsC=true);
  SPICE2_MOS1P.Cbg Cbg(
    PHI=PHI, 
    LD=LD, 
    W=W, 
    L=L, 
    TOX=TOX, 
    EPSR=EPSR, 
    CGBO=CGBO);
  // ---------------
  // Drain resistors
  // ---------------
  Rbreak Rs(R=RS, HIDDEN_COMPONENT=true);
  Rbreak Rd(R=RD, HIDDEN_COMPONENT=true);
  
  // -------------
  // Gate resistor
  // -------------
  Rbreak Rg(R=RG, HIDDEN_COMPONENT=true);
  
  // -------------
  // Bulk resistor
  // -------------
  Rbreak Rb(R=RB, HIDDEN_COMPONENT=true);
  Rbreak Rsb(HIDDEN_COMPONENT=true, R=RSB);
  Rbreak Rdb(HIDDEN_COMPONENT=true, R=RDB);
equation 
  
  //----------------------------------
  //Source-bulk junction: to avoid SSE
  //----------------------------------
  Dsb.vDiodeTran = Csb.vTran;
  
  //----------------------------------
  //Drain-bulk junction: to avoid SSE
  //----------------------------------
  Ddb.vDiodeTran = Cdb.vTran;
  
  // -----------------
  // Threshold voltage
  // -----------------  -vsbDC
  vthDC = (VTO - GAMMA*(sqrt(abs(PHI - vsbDC)) - sqrt(PHI)));
  vthTran = (VTO - GAMMA*(sqrt(abs(PHI - vsbTran)) - sqrt(PHI)));
  
  // ---
  // Vsd
  // ---
  vsdDC = noEvent((abs(Isd.vDC)));
  vsdDCSgn = Isd.vDC;
  
  vsdTran = noEvent(abs(Csg.vTran - Cdg.vTran));
  vsdTranSgn = Csg.vTran - Cdg.vTran;
  
  // ---
  // Vgs
  // ---
  vsgDC = max({Csg.vDC,Cdg.vDC});
  vsgTran = max({Csg.vTran,Cdg.vTran});
  
  // ---
  // Vbs
  // ---
  vsbDC = max({Csb.vDC,Cdb.vDC});
  vsbTran = max({Csb.vTran,Cdb.vTran});
  
  // ------------------------------------
  // Gate & bulk AC small-signal voltages
  // ------------------------------------
  gate_vAC_Re = g.vAC_Re;
  gate_vAC_Im = g.vAC_Im;
  bulk_vAC_Re = b.vAC_Re;
  bulk_vAC_Im = b.vAC_Im;
  
  (drain_vAC_mag,drain_vAC_phase) = Rect2Polar({d.vAC_Re,d.vAC_Im});
  drain_vAC_mag_dB = Decibels(drain_vAC_mag);
  
  (drain_iAC_mag,drain_iAC_phase) = Rect2Polar({d.iAC_Re,d.iAC_Im});
  drain_iAC_mag_dB = Decibels(drain_iAC_mag);
  
  (source_vAC_mag,source_vAC_phase) = Rect2Polar({s.vAC_Re,s.vAC_Im});
  source_vAC_mag_dB = Decibels(source_vAC_mag);
  
  (source_iAC_mag,source_iAC_phase) = Rect2Polar({s.iAC_Re,s.iAC_Im});
  source_iAC_mag_dB = Decibels(source_iAC_mag);
  
  (bulk_vAC_mag,bulk_vAC_phase) = Rect2Polar({b.vAC_Re,b.vAC_Im});
  bulk_vAC_mag_dB = Decibels(bulk_vAC_mag);
  
  (bulk_iAC_mag,bulk_iAC_phase) = Rect2Polar({b.iAC_Re,b.iAC_Im});
  bulk_iAC_mag_dB = Decibels(bulk_iAC_mag);
  
  (gate_vAC_mag,gate_vAC_phase) = Rect2Polar({g.vAC_Re,g.vAC_Im});
  gate_vAC_mag_dB = Decibels(gate_vAC_mag);
  
  (gate_iAC_mag,gate_iAC_phase) = Rect2Polar({g.iAC_Re,g.iAC_Im});
  gate_iAC_mag_dB = Decibels(gate_iAC_mag);
  
  when ctrl_log_DC and ((HIDDEN_COMPONENT == false) or (LOG_RESULTS == 2 and 
      HIDDEN_COMPONENT == true)) then
    LogVariable(g.vDC);
    LogVariable(d.vDC);
    LogVariable(s.vDC);
    LogVariable(b.vDC);
  end when;
  when ctrl_log_DC and ((HIDDEN_COMPONENT == false and LOG_RESULTS > 0) or (
      HIDDEN_COMPONENT == true and LOG_RESULTS == 2)) then
    LogVariable(vsdDC);
    LogVariable(vsbDC);
    LogVariable(vsgDC);
  end when;
  
  // ---------------------
  // Component connections
  // ---------------------
  connect(d, Rd.n);
  connect(Rd.p, Isd.n);
  connect(Isd.p, Rs.n);
  connect(Rs.p, s);
  
  connect(Rg.p, Cdg.n);
  connect(Rg.p, Csg.n);
  connect(Rg.p, Cbg.n);
  connect(Rg.n, g);
  
  connect(Rb.p, Dsb.n);
  connect(Rb.p, Csb.n);
  connect(Rb.p, Ddb.n);
  connect(Rb.p, Cdb.n);
  connect(Rb.p, Cbg.p);
  connect(b, Rb.n);
  
  connect(Isd.p, Csg.p);
  
  connect(Isd.n, Cdg.p);
  
  connect(Rsb.n, Csb.p);
  connect(Rsb.p, Isd.p);
  connect(Rdb.n, Cdb.p);
  connect(Rdb.p, Rd.p);
  connect(Cdb.p, Ddb.p);
  connect(Dsb.p, Csb.p);
  
end Spice2MOS1P;

SPICELib.src.BREAKOUT.Capacitor

Parameters

Name	Default	Description
IC	0	Initial voltage [V]
IC_ENABLED	false	IC enabled

Modelica definition

partial model Capacitor 
  /* 
--- Cvar and CvarAC have to be defined ---
*/
  
  extends INTERFACE.TwoPin;
  extends INIT.Part;
  constant SI.Resistance R_EPS=2e-4 "IC resistor";
  parameter SI.Voltage IC=0 "Initial voltage";
  parameter Boolean IC_ENABLED=false "IC enabled";
  constant Real pi=3.14159265358979;
  
  SI.Capacitance Cvar(start=1e-12) "Transient analysis capacitance";
  SI.Capacitance CvarAC(start=1E-12) "AC small-signal capacitance";
  
  SI.Voltage vDC "DC voltage across the capacitor";
  SI.Voltage vTran "Transient voltage across the capacitor";
  SI.Voltage vAC_Re 
    "Real part of AC small-signal voltage across the capacitor";
  SI.Voltage vAC_Im 
    "Imaginary part of AC small-signal voltage across the capacitor";
  SI.Current iDC "DC current";
  SI.Current iTran "Transient/Small-signal current";
  SI.Current iAC_Re "Small-signal current. Real part";
  SI.Current iAC_Im "Small-signal current. Imaginary part";
  
protected 
  SI.Current iClampTran;
  SI.Voltage vClampTran;
  SI.Voltage vClampDC;
  
  SI.Time timeClampTran;
  SI.Time timeClampDC;
equation 
  
  // ------------------------------------------------
  // i, v sign criterion: Positive current flows from 
  // the (+) node through the part to the (-) node
  // ------------------------------------------------
  {iDC,iTran,iAC_Re,iAC_Im} = {p.iDC,p.iTran + iClampTran,p.iAC_Re,p.iAC_Im};
  {iDC,iTran,iAC_Re,iAC_Im} = -{n.iDC,n.iTran - iClampTran,n.iAC_Re,n.iAC_Im};
  
  {vDC,vTran,vAC_Re,vAC_Im} = {p.vDC,p.vTran,p.vAC_Re,p.vAC_Im} - {n.vDC,n.
    vTran,n.vAC_Re,n.vAC_Im};
  
  // ---------------
  // Transient model
  // ---------------
  //Cvar*der(vTran) = iTran;
  iClampTran = if ctrl_IC_clampTran and IC_ENABLED then (vClampTran - vTran)/
    R_EPS else 0;
  when ctrl_IC_clampTran and IC_ENABLED then
    timeClampTran = time;
  end when;
  vClampTran = if ctrl_IC_clampTran and IC_ENABLED and ctrl_IC_mode == 0 then 
    IC else if ctrl_IC_clampTran and IC_ENABLED and ctrl_IC_mode == 1 then IC*(
    time - timeClampTran)/TIME_SCALE else 0;
  // Voltage initialization conditions
  when ctrl_CBREAK_Tran2IC and IC_ENABLED then
    reinit(vTran, IC);
  end when;
  when ctrl_CBREAK_Tran2DC then
    reinit(vTran, vDC);
  end when;
  when ctrl_CBREAK_resetTran then
    reinit(vTran, 0);
  end when;
  // ------------
  // Static model
  // ------------
  iDC = if ctrl_IC_clampDC and IC_ENABLED then (vDC - vClampDC)/R_EPS else 0;
  when ctrl_IC_clampDC and IC_ENABLED then
    timeClampDC = time;
  end when;
  vClampDC = if ctrl_IC_clampDC and IC_ENABLED and ctrl_IC_mode == 0 then IC
     else if ctrl_IC_clampDC and IC_ENABLED and ctrl_IC_mode == 1 then IC*(time
     - timeClampDC)/TIME_SCALE else 0;
  // ---------------------
  // AC small-signal model
  // ---------------------
  {vAC_Re,vAC_Im}*(2*pi*freq*CvarAC) = {iAC_Im,-iAC_Re};
  
end Capacitor;

SPICELib.src.BREAKOUT.Capacitor1

Parameters

Name	Default	Description
IC	0	Initial voltage [V]
IC_ENABLED	false	IC enabled
C	1E-9	Capacitance [F]

Modelica definition

model Capacitor1 
  extends Capacitor;
  parameter SI.Capacitance C=1E-9 "Capacitance";
equation 
  // ---------------
  // Transient model
  // ---------------
  Cvar*der(vTran) = iTran;
  Cvar = C;
  CvarAC = C;
  
end Capacitor1;

SPICELib.src.BREAKOUT.Inductor

Parameters

Name	Default	Description
IC	0	Initial current [V]
IC_ENABLED	false	IC enabled

Modelica definition

partial model Inductor 
  
  extends INTERFACE.TwoPin;
  extends INIT.Part;
  constant SI.Resistance R_BIG=1e9 "IC resistor";
  constant SI.Resistance R_BIG2=1e9 "Resistance to avoid high index problems";
  parameter SI.Voltage IC=0 "Initial current";
  parameter Boolean IC_ENABLED=false "IC enabled";
  
  constant Real pi=3.14159265358979;
  
  SI.Inductance Lvar "Transient analysis inductance";
  SI.Inductance LvarAC(start=1E-9) "AC small-signal inductance";
  
  SI.Voltage vDC "DC voltage across the inductor";
  SI.Voltage vTran "Transient voltage across the inductor";
  SI.Voltage vAC_Re 
    "Real part of AC small-signal voltage across the inductor";
  SI.Voltage vAC_Im 
    "Imaginary part of AC small-signal voltage across the inductor";
  SI.Current iDC "DC current";
  SI.Current iTran "Transient/Small-signal current";
  SI.Current iAC_Re "Small-signal current. Real part";
  SI.Current iAC_Im "Small-signal current. Imaginary part";
  SI.Voltage vAC_mag(start=0) 
    "Magnitude of AC small-signal voltage across the component";
  SI.Voltage vAC_mag_dB(start=0) 
    "Magnitude (dB) of AC small-signal voltage across the component";
  nonSI.Angle_deg vAC_phase(start=0) 
    "Phase (deg) of AC small-signal voltage across the component";
  
  SI.Current iAC_mag(start=0) "Magnitude of AC small-signal current";
  SI.Current iAC_mag_dB(start=0) "Magnitude (dB) of AC small-signal current";
  
  nonSI.Angle_deg iAC_phase(start=0) 
    "Phase (deg) of AC small-signal current";
  SI.Voltage pinP_vAC_mag(start=0);
  SI.Voltage pinP_vAC_phase(start=0);
  SI.Voltage pinP_vAC_mag_dB(start=0);
  
  SI.Voltage pinN_vAC_mag(start=0);
  SI.Voltage pinN_vAC_phase(start=0);
  SI.Voltage pinN_vAC_mag_dB(start=0);
protected 
  SI.Current iClampTran;
  SI.Voltage iClampDC;
  SI.Voltage vClampDC;
  SI.Voltage vClampTran;
  
  SI.Time timeClampTran;
  SI.Time timeClampDC;
equation 
  // ------------------------------------------------
  // i, v sign criterion: Positive current flows from 
  // the (+) node through the part to the (-) node
  // ------------------------------------------------
  {iDC,iTran,iAC_Re,iAC_Im} = {p.iDC,p.iTran - vTran/R_BIG2,p.iAC_Re - vAC_Re/
    R_BIG2,p.iAC_Im - vAC_Im/R_BIG2};
  {iDC,iTran,iAC_Re,iAC_Im} = -{n.iDC,n.iTran + vTran/R_BIG2,n.iAC_Re + vAC_Re/
    R_BIG2,n.iAC_Im + vAC_Im/R_BIG2};
  {vDC,vTran,vAC_Re,vAC_Im} = {p.vDC - vClampDC,p.vTran - vClampTran,p.vAC_Re,p
    .vAC_Im} - {n.vDC,n.vTran,n.vAC_Re,n.vAC_Im};
  // ---------------
  // Transient model
  // ---------------
  
  vClampTran = if ctrl_IC_clampTran and IC_ENABLED then (-iClampTran + iTran + 
    vTran/R_BIG2)*R_BIG else 0;
  when ctrl_IC_clampTran and IC_ENABLED then
    timeClampTran = time;
  end when;
  iClampTran = if ctrl_IC_clampTran and IC_ENABLED and ctrl_IC_mode == 0 then 
    IC else if ctrl_IC_clampTran and IC_ENABLED and ctrl_IC_mode == 1 then IC*(
    time - timeClampTran)/TIME_SCALE else 0;
  // Voltage initialization conditions
  when ctrl_CBREAK_Tran2IC and IC_ENABLED then
    reinit(iTran, IC);
  end when;
  when ctrl_CBREAK_Tran2DC then
    reinit(iTran, iDC);
  end when;
  when ctrl_CBREAK_resetTran then
    reinit(iTran, 0);
  end when;
  // ------------
  // Static model
  // ------------
  vDC = 0;
  vClampDC = if ctrl_IC_clampDC and IC_ENABLED then (iDC - iClampDC)*R_BIG
     else 0;
  when ctrl_IC_clampDC and IC_ENABLED then
    timeClampDC = time;
  end when;
  iClampDC = if ctrl_IC_clampDC and IC_ENABLED and ctrl_IC_mode == 0 then IC
     else if ctrl_IC_clampDC and IC_ENABLED and ctrl_IC_mode == 1 then IC*(time
     - timeClampDC)/TIME_SCALE else 0;
  // ---------------------
  // AC small-signal model
  // ---------------------
  {vAC_Re,vAC_Im} = {iAC_Im,-iAC_Re}*(2*pi*freq*LvarAC);
  (pinP_vAC_mag,pinP_vAC_phase) = Rect2Polar({p.vAC_Re,p.vAC_Im});
  pinP_vAC_mag_dB = Decibels(pinP_vAC_mag);
  
  (pinN_vAC_mag,pinN_vAC_phase) = Rect2Polar({n.vAC_Re,n.vAC_Im});
  pinN_vAC_mag_dB = Decibels(pinN_vAC_mag);
  
  (vAC_mag,vAC_phase) = Rect2Polar({vAC_Re,vAC_Im});
  vAC_mag_dB = Decibels(vAC_mag);
  
  (iAC_mag,iAC_phase) = Rect2Polar({iAC_Re,iAC_Im});
  iAC_mag_dB = Decibels(iAC_mag);
  
  
end Inductor;