SPICELib.src.BREAKOUT.DIODE_PSPICE

Name	Description
I_DIODE
C_DIODE

SPICELib.src.BREAKOUT.DIODE_PSPICE.I_DIODE

Parameters

Name	Default	Description
IS		Reverse saturation current at 300K [A]
BV		Reverse breakdown voltage (positive number) [V]
N		Emission coefficient
IKF		High injection knee current [A]
ISR		Recombination current [A]
NR		Emission coefficient for ISR
IBV		Reverse breakdown current (positive number) [A]
M		Grading coefficient
VJ		Junction potencial [V]

Modelica definition

model I_DIODE 
  extends INTERFACE.OnePort;
  extends INIT.Part;
  parameter SI.Current IS "Reverse saturation current at 300K";
  
  
    //  parameter SI.Conductance GMIN "Conductance in parallel with the pn-junction";
  parameter SI.Voltage BV "Reverse breakdown voltage (positive number)";
  parameter Real N "Emission coefficient";
  parameter SI.Current IKF "High injection knee current";
  parameter SI.Current ISR "Recombination current";
  parameter Real NR "Emission coefficient for ISR";
  parameter SI.Current IBV "Reverse breakdown current (positive number)";
  //  SI.Current IBV "Reverse breakdown current (positive number)";
  parameter Real M "Grading coefficient";
  parameter SI.Voltage VJ "Junction potencial";
  
  SI.Voltage vDiodeTran "Voltage drop across the current source";
  
protected 
  SI.Conductance gAC(start=1) "AC small-signal conductance";
  SI.Voltage thermalVolt "Thermal voltage";
  Real KhliDC;
  Real KgenDC;
  Real KhliDCs(start=1);
  Real KgenDCs(start=1);
  SI.Current IFDC;
  SI.Current IRDC;
  SI.Current IFDCs(start=1);
  SI.Current IRDCs(start=1);
  SI.Current IREVDC;
  Real KhliTran;
  Real KgenTran;
  SI.Current IFTran;
  SI.Current IRTran;
  SI.Current IREVTran;
  Real derKhli;
  Real derKgen;
  SI.Conductance derIF;
  SI.Conductance derIR;
  SI.Conductance derIREV;
equation 
  // Thermal voltage: kT/q
  thermalVolt = temp/11600;
  
  // ------------
  // Static Model
  // ------------
  
  KhliDC = if (IKF > IS and ctrl_DC) then sqrt(IKF/(IKF + IFDC)) else 1;
  
  KgenDC = if (ctrl_DC) then sqrt(((1 - vDC/VJ)^2 + 0.005)^M) else 1;
  
  IFDC = if (ctrl_DC) then IS*(exp(vDC/thermalVolt/N) - 1) else 0;
  
  IRDC = if (ctrl_DC) then ISR*(exp(vDC/thermalVolt/NR) - 1) else 0;
  
  IREVDC = if (ctrl_DC) then IBV*exp(-(BV + vDC)/thermalVolt) else 0;
  0 = if (ctrl_DC) then -iDC + KhliDC*IFDC + KgenDC*IRDC - IREVDC + vDC*GMIN*
    scaleGMIN else vDC;
  
  // ------------------
  // Large-signal Model
  // ------------------
  
  KhliTran = if (IKF > IS) then sqrt(IKF/(IKF + IFTran)) else 1;
  
  KgenTran = sqrt(((1 - vDiodeTran/VJ)^2 + 0.005)^M);
  
  IFTran = IS*(exp(vDiodeTran/thermalVolt/N) - 1);
  
  IRTran = ISR*(exp(vDiodeTran/thermalVolt/NR) - 1);
  
  IREVTran = IBV*exp(-(BV + vDiodeTran)/thermalVolt);
  
  iTran = KhliTran*IFTran + KgenTran*IRTran - IREVTran + vTran*GMIN;
  
  // ---------------------
  // AC Small Signal Model
  // ---------------------
  
  when ctrl_AC then
    
    derIF = IS/thermalVolt/N*exp(vDC/thermalVolt/N);
    
    derIR = ISR/thermalVolt/NR*exp(vDC/thermalVolt/NR);
    
    derIREV = -IBV/thermalVolt*exp(-(BV + vDC)/thermalVolt);
    
    IFDCs = IS*(exp(vDC/thermalVolt/N) - 1);
    
    IRDCs = ISR*(exp(vDC/thermalVolt/NR) - 1);
    
    derKhli = if (IKF > IS) then -0.5/sqrt(IKF/(IKF + IFDCs))*derIF*IKF/(IKF + 
      IFDCs)^2 else 0;
    
    derKgen = -M/VJ*(1 - vDC/VJ)*((1 - vDC/VJ)^2 + 0.005)^(M/2 - 1);
    
    KhliDCs = if (IKF > IS) then sqrt(IKF/(IKF + IFDCs)) else 1;
    
    KgenDCs = sqrt(((1 - vDC/VJ)^2 + 0.005)^M);
    
    gAC = derKhli*IFDCs + derIF*KhliDCs + derKgen*IRDCs + KgenDCs*derIR + 
      derIREV + GMIN;
    
  end when;
  
  {iAC_Re,iAC_Im} = gAC*{vAC_Re,vAC_Im};
  
end I_DIODE;

SPICELib.src.BREAKOUT.DIODE_PSPICE.C_DIODE

Parameters

Name	Default	Description
IC	0	Initial voltage [V]
IC_ENABLED	false	IC enabled
CJ0		Zero-bias junction capacitance [F]
TT		Transit time [s]
M		Grading coefficient
FC		Coefficient for forward-bias depletion capacitance formula
VJ		Junction potencial [V]
IS		Reverse saturation current at 300K [A]
BV		Reverse breakdown voltage (positive number) [V]
N		Emission coefficient
IKF		High injection knee current [A]
ISR		Recombination current [A]
NR		Emission coefficient for ISR
IBV		Reverse breakdown current (positive number) [A]

Modelica definition

model C_DIODE 
  extends src.BREAKOUT.Capacitor;
  extends INIT.Part;
  parameter Real CJ0 "Zero-bias junction capacitance [F]";
  parameter Real TT "Transit time [s]";
  parameter Real M "Grading coefficient";
  parameter Real FC 
    "Coefficient for forward-bias depletion capacitance formula";
  parameter SI.Voltage VJ "Junction potencial";
  parameter SI.Current IS "Reverse saturation current at 300K";
  parameter SI.Voltage BV "Reverse breakdown voltage (positive number)";
  parameter Real N "Emission coefficient";
  parameter SI.Current IKF "High injection knee current";
  parameter SI.Current ISR "Recombination current";
  parameter Real NR "Emission coefficient for ISR";
  parameter SI.Current IBV "Reverse breakdown current (positive number)";
  
protected 
  parameter Real F2=(1 - FC)^(1 + M);
  parameter Real F3=1 - FC*(1 + M);
  SI.Conductance gAC(start=1);
  SI.Conductance gTran(start=1);
  SI.Voltage thermalVolt "Thermal voltage";
  Real KhliDC;
  Real KgenDC;
  SI.Current IFDC;
  SI.Current IRDC;
  Real KhliTran;
  Real KgenTran;
  SI.Current IFTran;
  SI.Current IRTran;
  Real derKhliDC;
  Real derKgenDC;
  Real derKhliTran;
  Real derKgenTran;
  SI.Conductance derIFDC;
  SI.Conductance derIRDC;
  SI.Conductance derIREVDC;
  SI.Conductance derIFTran;
  SI.Conductance derIRTran;
  SI.Conductance derIREVTran;
equation 
  // Thermal voltage: kT/q
  thermalVolt = temp/11600;
  
  // ------------------------
  // Large-signal capacitance
  // ------------------------
  
  Cvar*der(vTran) = iTran;
  
  derIFTran = IS/thermalVolt/N*exp(vTran/thermalVolt/N);
  
  derIRTran = ISR/thermalVolt/NR*exp(vTran/thermalVolt/NR);
  
  derIREVTran = -IBV/thermalVolt*exp(-(BV + vTran)/thermalVolt);
  
  IFTran = IS*(exp(vTran/thermalVolt/N) - 1);
  
  IRTran = ISR*(exp(vTran/thermalVolt/NR) - 1);
  
  derKhliTran = if (IKF > IS) then -0.5/sqrt(IKF/(IKF + IFTran))*derIFTran*IKF/
    (IKF + IFTran)^2 else 0;
  
  derKgenTran = -M/VJ*(1 - vTran/VJ)*((1 - vTran/VJ)^2 + 0.005)^(M/2 - 1);
  
  KhliTran = if (IKF > IS) then sqrt(IKF/(IKF + IFTran)) else 1;
  
  KgenTran = sqrt(((1 - vTran/VJ)^2 + 0.005)^M);
  
  gTran = derKhliTran*IFTran + derIFTran*KhliTran + derKgenTran*IRTran + 
    KgenTran*derIRTran - derIREVTran + GMIN;
  
  Cvar = if noEvent(vTran < FC*VJ) then TT*gTran + CJ0*(1 - vTran/VJ)^(-M)
     else TT*gTran + CJ0/F2*(F3 + M*vTran/VJ);
  
  // ---------------------------
  // AC small-signal capacitance
  // ---------------------------
  
  when ctrl_AC then
    
    derIFDC = IS/thermalVolt/N*exp(vDC/thermalVolt/N);
    
    derIRDC = ISR/thermalVolt/NR*exp(vDC/thermalVolt/NR);
    
    derIREVDC = -IBV/thermalVolt*exp(-(BV + vDC)/thermalVolt);
    
    IFDC = IS*(exp(vDC/thermalVolt/N) - 1);
    
    IRDC = ISR*(exp(vDC/thermalVolt/NR) - 1);
    
    derKhliDC = if (IKF > IS) then -0.5/sqrt(IKF/(IKF + IFDC))*derIFDC*IKF/(IKF
       + IFDC)^2 else 0;
    
    derKgenDC = -M/VJ*(1 - vDC/VJ)*((1 - vDC/VJ)^2 + 0.005)^(M/2 - 1);
    
    KhliDC = if (IKF > IS) then sqrt(IKF/(IKF + IFDC)) else 1;
    
    KgenDC = sqrt(((1 - vDC/VJ)^2 + 0.005)^M);
    
    gAC = derKhliDC*IFDC + derIFDC*KhliDC + derKgenDC*IRDC + KgenDC*derIRDC + 
      derIREVDC + GMIN;
    
    CvarAC = if (vDC < FC*VJ) then TT*gAC + CJ0*(1 - vDC/VJ)^(-M) else TT*gAC
       + CJ0/F2*(F3 + M*vDC/VJ);
    
  end when;
end C_DIODE;